By Eivind J. Øvreli, Kai Tang, Thorvald Engh (auth.), Kazuo Nakajima, Noritaka Usami (eds.)
This quantity offers a entire survey of the technology and know-how of crystal progress of Si for sunlight cells with emphasis on basic technological know-how. ranging from feedstock, crystal progress of bulk crystals (single crystal and multicrystals) and skinny movie crystals are mentioned. a variety of illustrations advertise a comprehension of crystal-growth physics. the elemental wisdom on crystal development mechanisms acquired via this ebook will give a contribution to destiny advancements of novel crystal development applied sciences for extra development of conversion potency of Si-based sunlight cells.
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Additional resources for Crystal Growth of Si for Solar Cells
Durand, Sol. Energy Mater. Sol. R. , A. H. D. Blais, P. R. C. Mollenkopf, IEEE Trans. Electron. M. K. Schroder, J. Appl. Phys. 59, 2487 (1986) J. Schmidt, K. Bothe, Phys. Rev. B 69, 024107 (2004) B. Lim, S. Hermann, K. Bothe, J. Schmidt, R. Brendel, Appl. Phys. Lett. F. H. Wang, J. Cryst. V. Voronkov, J. Cryst. I. C. K. C. W. Lan, J. Cryst. Growth 266, 132 (2004) 3 Floating Zone Crystal Growth Helge Riemann∗ and Anke Luedge Abstract. This chapter outlines one of the two practically important bulk crystal growth methods for silicon, the crucible-less ﬂoating zone (FZ) technique, which cannot be evaluated without comparing it to the other one, the Czochralski (CZ) method.
Accordingly, the removal of SiO from the melt surface is more eﬀective. The argon ﬂow rate could be reduced from 60 to 15 slpm in our study. This corresponds to 27 cf per kg of Si; the original was 93 cf per kg. The argon ﬂow path is shown by the vector ﬁeld on the right hand side of Fig. 2a. With the cone, near the melt surface, no ﬂow circulation is found, which is believed to be useful in minimizing the falling of SiO particles from the upper cooler surfaces. Nevertheless, the upper part of the cone still has signiﬁcant SiO deposition.
Vrelid et al. 5 fraction solid measured model Eq 25 1 Scheil Fig. 13. Segregation pattern in 12 kg ingot with C0 = 8 For double solidiﬁcation, the mean relative impurity content in the cut-oﬀ fraction becomes the initial concentration in the second solidiﬁcation process, giving: 2 C¯s2 C¯s1 C¯s2 1 − fk = = . 002. We wanted to check if this value is valid for our 12 kg lab-scale furnace. An ingot was made with 8 ppm Al, and the concentration in the ingot was determined from the resistivity. The results are shown in Fig.