Brainware : Bio-Inspired Architecture and Its Hardware by Tsutomu Miki

By Tsutomu Miki

The human mind, the last word clever processor, can deal with ambiguous and unsure details effectively. The implementation of this kind of human-brain structure and serve as is named “brainware”. Brainware is a candidate for the hot instrument that might observe a human-friendly laptop society. As one of many LSI implementations of brainware, a “bio-inspired” method is mentioned during this book.Consisting of 8 enriched types of papers chosen from IIZUKA '98, this quantity presents extensive insurance, from neuronal functionality units to imaginative and prescient platforms, chaotic structures, and likewise an efficient layout method of hierarchical large-scale neural platforms encouraged by means of neuroscience. it may well function a reference for graduate scholars and researchers operating within the box of brainware. it's also a resource of thought for learn in the direction of the belief of a silicon mind.

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Yoon, E. 250 & H. 8 NH4F:HC1 (NH4F Concentration, M/1) 20 30 40 Etching Time (s) 50 (b) Fig. 5 Etching characteristics of NH4F:HCl;(a)Dependence of etching rates on the concentration of NH4F. (b)Dependence on the crystallization temperature of SBT. After many trials, we developed a new wet selective etchant for SBT film, NBi4F:HCl solution. 7 M/1, the etching selectivity of about 14:1 was obtained. It was also found t h a t the etching rate of S B T film in this etchant was dependent on the crystallization t e m p e r a t u r e of S B T , as shown in Fig.

Nakada, M. Konda, T. Morimoto, T. Yonezawa, T. Shibata and T. Ohmi, "FullyParallel VLSI Implementation of Vector Quantization Processor uisng Neuron-MOS Technology," Vol. E82-C, No. 9, pp. 1730-1737 (1999). [32] A. Gersho and R. M. Gray, "Vector quantization and signal compression," Kluwer 32 T. Shibata Academic Publishers, Boston, 1992. [33] T. Nakai, T. Shibata, and T. Ohmi, "Neuron-MOS Quasi-Two-Dimensional Image Processor for Real-Time Motion Vector Detection," in the Proceedings of the 4th International Conference on Soft computing, Methodologies for the conception, design, and Application of Intelligent Systems (World Scientific, Singapore, 1996) pp.

Since a sol-gel derived SBT film with poly crystalline structure can be deposited directly on Si without significant degradation of the interface, the SBT/Si structure can be used for MFSFET applications. We have confirmed the memory operations of MFSFET using this structure [23]. However, the memory window width is much narrower than the expected value, which is ascribed to the existence of transition layer with low dielectric constant such as SiC>2 formed at the interface. Although Ce02 and Y2O3 are also selected as buffer layers for forming an MFIS-FET [24]-[25], they are not very effective for improving this problem.

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